PART |
Description |
Maker |
MGFL45V1920 L45V1920 |
From old datasheet system 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET 1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC45V6472A_04 MGFC45V6472A MGFC45V6472A04 |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC45V5867 |
MGFC45V5867 5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC45V6472A C456472A |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC45V3642A C453642A |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.6 - 4.2GHz波段32W内部匹配砷化镓场效应 From old datasheet system
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFC39V3436_04 MGFC39V3436 MGFC39V343604 |
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFS45V2123A MGFS45V2123A11 |
2.1-2.3 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
SY58034U |
6GHz, 1:6 CML FANOUT BUFFER WITH 2:1 MUX INPUT AND INTERNAL I/O TERMINATION 6GHz:6扇出缓冲器与白血:1 MUX输入和内部的I / O终止
|
Micrel Semiconductor, Inc.
|
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK38V2732 K382732 |
From old datasheet system 12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET 12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET 12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK25V4045 K254045 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 0.3W INTERNALLY MATCHED GAAS FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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